sop8 plastic-encapsulate mosfets CJQ9435 p-channel 30-v(d-s) mosfet equivalent circuit maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 2 4 v continuous drain current* i d 5.1 pulsed drain current i dm 20 continuous source current(diode conduction) * i s -2.6 a thermal resistance from junction to ambient* r ja 100 /w junction temperature t j 150 storage temperature t stg -55 ~+150 * t 10 s sop8 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,feb,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -1.0 - 2 v gate-body leakage i gss v ds =0v, v gs =2 4 v 100 na zero gate voltage drain current i dss v ds =-24v, v gs =0v -1 a v gs =-10v, i d =-4.6a 60 v gs =-6v, i d =-4.1a 70 drain-source on-resistance a r ds(on ) v gs =-4.5v, i d =-2a 105 m ? forward transconductance a g fs v ds =-15v, i d =-4.6a 5.0 s diode forward voltage a v sd i s =-2.6a,v gs =0v -1.2 v dynamic total gate charge b q g 40 gate-source charge b q gs 4 gate-drain charge b q gd v ds =-15v,v gs =-10v,i d =-4.6a 6.3 nc turn-on delay time b,c t d (on) 30 rise time b,c t r 60 turn-off delay time b,c t d(off) 120 fall time b,c t f v dd =-15v,r l =15
, i d -1a, v gen =-10v,r g =6
100 n s notes : a. pulse test : pulse width ? 300s, duty cycle ? 2%. b. guaranteed by design, not su bject to production testing. c. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,feb,2013
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 20 40 60 80 100 -2 -4 -6 -8 -10 30 60 90 120 150 180 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 t a =25 pulsed t a =25 pulsed i s ?? v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v i d ?? r ds(on) on-resistance r ds(on) (m ) drain current i d (a) CJQ9435 v gs ?? r ds(on) i d =-4.1a on-resistance r ds(on) (m ) gate to source voltage v gs (v) v gs =-10 -5.0 -4.5 -4.0v v gs =-3.5v v gs =-3.0v output characteristics drain current i d (a) drain to source voltage v ds (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification f,feb,2013
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